Scope of workshop

The trapping of electrons and holes at defects in semiconductors and insulators is an important issue that controls the performance of materials for applications in areas such as photovoltaics, electronics and catalysis. Point defects such as vacancies or impurities as well as extended defects such as surfaces, grain boundaries and dislocations are all known to trap charge. Both theoretical (e.g. density functional theory) and experimental approaches (e.g. spectroscopic and scanning probe techniques) have been employed to characterise the electronic properties of defects however many open questions and challenges remain. This workshop aims to bring together leading researchers working in this field to review the progress and challenges in understanding charge trapping at defects and highlight technological applications where it is critical for materials design and optimisation. We aim for around 50 attendees to create a intimate atmosphere and encourage discussion.
 
The workshop will be held 20-21 March in the historic city of York, UK. Thanks to generous support from EPSRC and the University of York we are able to offer registration for this workshop at a significantly subsidised rate of £40/€45.  Applications will be accepted on a first come first served basis until all places are filled.
 
 

Invited speakers

We are pleased to confirm the following invited speakers (with others to be added soon):
  • Prof Filippo De Angelis, Istituto di Scienze e Tecnologie Molecolari del CNR (CNR-ISTM)
  • Dr Jon Major, University of Liverpool
  • Dr Chris Moore, Dyesol Ltd
  • Dr David Scanlon, University College London
  • Prof Kevin Sivula, Ecole polytechnique fédérale de Lausanne
  • Prof Alex Shluger, University College London
  • Prof Alison Walker, University of Bath

 

Contributed talks and posters

There will also be places for contributed talks and posters and we encourage submission of abstracts at the time of registration. We particularly welcome contributions in the following areas:
  • Studies that address charge trapping at point defects, surfaces, grain boundaries, nanoparticle interfaces
  • Experimental methods to probe defect properties (e.g. spectroscopic techniques and/or scanning probes)
  • First principles approaches for modelling defects (e.g. using density functional theory)
  • Device level modelling and characterisation
  • Progress and challenges relevant to technological applications (e.g. solar cells, electronics, photoelectrochemistry)

 

Organisers

  • Keith McKenna, Department of Physics, University of York
  • Richard Douthwaite, Department of Chemistry, University of York

 

Sponsors

EPSRC logoUniversity of York logo

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